AMD RX470 8 GB
Moneda
Mem.
vendor
vendor
Hashrate
Wt (socket)
Core
Mem.
Core
voltage
voltage
Mem.
voltage
voltage
VDDCI
voltage
voltage
Beneficio neto
Moneda:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 15.3 MH/s
Wt (socket) 167
Core: 1166
Mem.: 2050
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.332$
Moneda:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.79 MH/s
Wt (socket) 167
Core: 1060
Mem.: 1875
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.321$
Moneda:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.32 MH/s
Wt (socket) 156
Core: 1090
Mem.: 1925
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.311$
Moneda:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.32 MH/s
Wt (socket) 151
Core: 1084
Mem.: 1925
Core voltage: 832
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.311$
Moneda:
Kawpow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.69 MH/s
Wt (socket) 158
Core: 1060
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.297$
Moneda:
Kawpow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.47 MH/s
Wt (socket) 131
Core: 1016
Mem.: 1800
Core voltage: 745
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.292$
Moneda:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 15.3 MH/s
Wt (socket) 167
Core: 1166
Mem.: 2050
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.273$
Moneda:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 15.3 MH/s
Wt (socket) 167
Core: 1166
Mem.: 2050
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.264$
Moneda:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.79 MH/s
Wt (socket) 167
Core: 1060
Mem.: 1875
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.264$
Moneda:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.32 MH/s
Wt (socket) 156
Core: 1090
Mem.: 1925
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.255$
Moneda:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.32 MH/s
Wt (socket) 151
Core: 1084
Mem.: 1925
Core voltage: 832
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.255$
Moneda:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.79 MH/s
Wt (socket) 167
Core: 1060
Mem.: 1875
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.255$
Moneda:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.32 MH/s
Wt (socket) 156
Core: 1090
Mem.: 1925
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.247$
Moneda:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.32 MH/s
Wt (socket) 151
Core: 1084
Mem.: 1925
Core voltage: 832
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.247$
Moneda:
Kawpow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.69 MH/s
Wt (socket) 158
Core: 1060
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.244$
Moneda:
Kawpow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.47 MH/s
Wt (socket) 131
Core: 1016
Mem.: 1800
Core voltage: 745
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.24$
Moneda:
FiroPow
Mem. vendor: Samsung K4G80325FB
Hashrate: 15.3 MH/s
Wt (socket) 163
Core: 1166
Mem.: 2050
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.238$
Moneda:
Kawpow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.69 MH/s
Wt (socket) 158
Core: 1060
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.236$
Moneda:
Kawpow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.47 MH/s
Wt (socket) 131
Core: 1016
Mem.: 1800
Core voltage: 745
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.232$
Moneda:
FiroPow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.79 MH/s
Wt (socket) 163
Core: 1060
Mem.: 1875
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.23$
Moneda:
FiroPow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.32 MH/s
Wt (socket) 147
Core: 1084
Mem.: 1925
Core voltage: 832
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.223$
Moneda:
FiroPow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.32 MH/s
Wt (socket) 152
Core: 1090
Mem.: 1925
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.223$
Moneda:
FiroPow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.69 MH/s
Wt (socket) 154
Core: 1060
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.213$
Moneda:
FiroPow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.47 MH/s
Wt (socket) 127
Core: 1016
Mem.: 1800
Core voltage: 745
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.209$
Moneda:
Verthash
Mem. vendor:
Hashrate: 535 kH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.201$
Moneda:
Kawpow
Mem. vendor:
Hashrate: 10 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.155$
Moneda:
Autolykos
Mem. vendor: Samsung K4G80325FB
Hashrate: 61.49 MH/s
Wt (socket) 98
Core: 1166
Mem.: 1875
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.122$
Moneda:
Autolykos
Mem. vendor: Samsung K4G41325FE
Hashrate: 59.43 MH/s
Wt (socket) 98
Core: 1060
Mem.: 1725
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.118$
Moneda:
Autolykos
Mem. vendor: Micron MT51J256M3
Hashrate: 57.55 MH/s
Wt (socket) 91
Core: 1090
Mem.: 1763
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.114$
Moneda:
Autolykos
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 57.55 MH/s
Wt (socket) 88
Core: 1084
Mem.: 1763
Core voltage: 825
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.114$
Moneda:
Autolykos
Mem. vendor: Elpida EDW4032BABG
Hashrate: 55.02 MH/s
Wt (socket) 92
Core: 1060
Mem.: 1725
Core voltage: 830
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.109$
Moneda:
Autolykos
Mem. vendor: Samsung K4G20325FS
Hashrate: 54.12 MH/s
Wt (socket) 77
Core: 1016
Mem.: 1650
Core voltage: 739
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.107$
Moneda:
Cuckoo (AE)
Mem. vendor:
Hashrate: 1.8 Gp/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.092$
Moneda:
Ethash
Mem. vendor: Samsung K4G80325FB
Hashrate: 31.39 MH/s
Wt (socket) 126
Core: 1166
Mem.: 2075
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.091$
Moneda:
Ethash
Mem. vendor: Samsung K4G41325FE
Hashrate: 30.34 MH/s
Wt (socket) 126
Core: 1060
Mem.: 1900
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.088$
Moneda:
Ethash
Mem. vendor: Micron MT51J256M3
Hashrate: 29.38 MH/s
Wt (socket) 118
Core: 1090
Mem.: 1950
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.085$
Moneda:
Ethash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.38 MH/s
Wt (socket) 114
Core: 1084
Mem.: 1950
Core voltage: 838
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.085$
Moneda:
Ethash
Mem. vendor: Samsung K4G80325FB
Hashrate: 31.39 MH/s
Wt (socket) 126
Core: 1166
Mem.: 2075
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.084$
Moneda:
Ethash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 28.09 MH/s
Wt (socket) 119
Core: 1060
Mem.: 1900
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.081$
Moneda:
Ethash
Mem. vendor: Samsung K4G41325FE
Hashrate: 30.34 MH/s
Wt (socket) 126
Core: 1060
Mem.: 1900
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.081$
Moneda:
Ethash
Mem. vendor: Samsung K4G20325FS
Hashrate: 27.63 MH/s
Wt (socket) 99
Core: 1016
Mem.: 1825
Core voltage: 750
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.08$
Moneda:
Etchash
Mem. vendor: Samsung K4G80325FB
Hashrate: 31.39 MH/s
Wt (socket) 126
Core: 1166
Mem.: 2075
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.079$
Moneda:
Blake 3
Mem. vendor: Samsung K4G80325FB
Hashrate: 0.527 GH/s
Wt (socket) 107
Core: 1229
Mem.: 601
Core voltage: 887
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.079$
Moneda:
Ethash
Mem. vendor: Micron MT51J256M3
Hashrate: 29.38 MH/s
Wt (socket) 118
Core: 1090
Mem.: 1950
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.079$
Moneda:
Ethash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.38 MH/s
Wt (socket) 114
Core: 1084
Mem.: 1950
Core voltage: 838
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.079$
Moneda:
Ethash
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 29.2 MH/s 88.13 MH/s
Wt (socket) 176
Core: 1214
Mem.: 2050
Core voltage: 920
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.079$
Moneda:
Etchash
Mem. vendor: Samsung K4G41325FE
Hashrate: 30.34 MH/s
Wt (socket) 126
Core: 1060
Mem.: 1900
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.077$
Moneda:
Blake 3
Mem. vendor: Samsung K4G41325FE
Hashrate: 0.51 GH/s
Wt (socket) 107
Core: 1117
Mem.: 601
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.076$
Moneda:
Ethash
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 28.23 MH/s 88.13 MH/s
Wt (socket) 176
Core: 1104
Mem.: 1875
Core voltage: 900
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.076$
Moneda:
Ethash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 28.09 MH/s
Wt (socket) 119
Core: 1060
Mem.: 1900
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.075$
Moneda:
Etchash
Mem. vendor: Micron MT51J256M3
Hashrate: 29.38 MH/s
Wt (socket) 118
Core: 1090
Mem.: 1950
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.074$
Moneda:
Etchash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.38 MH/s
Wt (socket) 114
Core: 1084
Mem.: 1950
Core voltage: 838
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.074$
Moneda:
Etchash
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 29.2 MH/s 88.13 MH/s
Wt (socket) 176
Core: 1214
Mem.: 2050
Core voltage: 920
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.074$
Moneda:
Ethash
Mem. vendor: Samsung K4G20325FS
Hashrate: 27.63 MH/s
Wt (socket) 99
Core: 1016
Mem.: 1825
Core voltage: 750
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.074$
Moneda:
Blake 3
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 0.494 GH/s
Wt (socket) 97
Core: 1143
Mem.: 601
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.074$
Moneda:
Blake 3
Mem. vendor: Micron MT51J256M3
Hashrate: 0.494 GH/s
Wt (socket) 100
Core: 1149
Mem.: 601
Core voltage: 893
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.074$
Moneda:
Ethash
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 27.33 MH/s 88.13 MH/s
Wt (socket) 165
Core: 1135
Mem.: 1925
Core voltage: 926
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.074$
Moneda:
Ethash
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 27.33 MH/s 88.13 MH/s
Wt (socket) 160
Core: 1129
Mem.: 1925
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.074$
Moneda:
Etchash
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 28.23 MH/s 88.13 MH/s
Wt (socket) 176
Core: 1104
Mem.: 1875
Core voltage: 900
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.072$
Moneda:
Etchash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 28.09 MH/s
Wt (socket) 119
Core: 1060
Mem.: 1900
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.071$
Moneda:
Blake 3
Mem. vendor: Elpida EDW4032BABG
Hashrate: 0.472 GH/s
Wt (socket) 101
Core: 1117
Mem.: 601
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.071$
Moneda:
Ethash
Heavyhash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 26.13 MH/s 88.13 MH/s
Wt (socket) 167
Core: 1104
Mem.: 1875
Core voltage: 886
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.071$
Moneda:
Etchash
Mem. vendor: Samsung K4G20325FS
Hashrate: 27.63 MH/s
Wt (socket) 99
Core: 1016
Mem.: 1825
Core voltage: 750
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.07$
Moneda:
Etchash
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 27.33 MH/s 88.13 MH/s
Wt (socket) 165
Core: 1135
Mem.: 1925
Core voltage: 926
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.07$
Moneda:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 27.33 MH/s 88.13 MH/s
Wt (socket) 160
Core: 1129
Mem.: 1925
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.07$
Moneda:
Blake 3
Mem. vendor: Samsung K4G20325FS
Hashrate: 0.464 GH/s
Wt (socket) 84
Core: 1071
Mem.: 601
Core voltage: 762
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.069$
Moneda:
Ethash
Heavyhash
Mem. vendor: Samsung K4G20325FS
Hashrate: 25.71 MH/s 88.13 MH/s
Wt (socket) 139
Core: 1058
Mem.: 1800
Core voltage: 789
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.069$
Moneda:
Etchash
Heavyhash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 26.13 MH/s 88.13 MH/s
Wt (socket) 167
Core: 1104
Mem.: 1875
Core voltage: 886
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.066$
Moneda:
Etchash
Heavyhash
Mem. vendor: Samsung K4G20325FS
Hashrate: 25.71 MH/s 88.13 MH/s
Wt (socket) 139
Core: 1058
Mem.: 1800
Core voltage: 789
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.065$
Moneda:
NexaPow
Mem. vendor: Micron MT51J256M3
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.065$
Moneda:
NexaPow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.065$
Moneda:
NexaPow
Mem. vendor: Samsung K4G41325FE
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.065$
Moneda:
NexaPow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.065$
Moneda:
NexaPow
Mem. vendor: Samsung K4G80325FB
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.065$
Moneda:
NexaPow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.065$
Moneda:
Karlsen
Mem. vendor:
Hashrate: 210 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.06$
Moneda:
Pyrin
Mem. vendor:
Hashrate: 550 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.041$
Moneda:
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 148.60582278481013 MH/s
Wt (socket) 110
Core: 1229
Mem.: 601
Core voltage: 887
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 143.63493670886075 MH/s
Wt (socket) 110
Core: 1117
Mem.: 601
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 139.09012658227846 MH/s
Wt (socket) 103
Core: 1149
Mem.: 601
Core voltage: 893
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 139.09012658227846 MH/s
Wt (socket) 100
Core: 1143
Mem.: 601
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Heavyhash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 132.98303797468353 MH/s
Wt (socket) 104
Core: 1117
Mem.: 601
Core voltage: 855
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Heavyhash
Mem. vendor: Samsung K4G20325FS
Hashrate: 130.80531645569621 MH/s
Wt (socket) 87
Core: 1071
Mem.: 601
Core voltage: 761
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Fabricante
AMD
Fecha de lanzamiento
2016
Procesador
Ellesmere
Precio de lanzamiento
0.00$
Precio actual
320.00$
TDP
120W
Tipo de memoria
GDDR5
Memoria
8GB
Ancho de bus
256
Tarjeta de video AMD RX470 de 8 GB en mineria. Especificaciones, precio, hashrate
Fecha y precio de lanzamiento
AMD RX470 se lanzó en 2016. Precio de lanzamiento: 0.00 $. Precio actual aproximado - 320.00 $. Por favor, preste atención al cambio de precio en comparación con el año de lanzamiento de la tarjeta de video, antes de decidir si comprar una tarjeta AMD RX470.
RX470 en mineria
La mejor moneda para extraer con la tarjeta grafica RX470 - MeowCoin, te da una tasa de hash de 15.3 MH/s. Con la dificultad diaria actual, ganará 0.332 $, por lo que el ROI de RX470 es de 964 días.
Consumo de RX470
RX470 TDP es de 120 vatios, mientras que en mineria consume 167 vatios en promedio.
