AMD RX570 4 GB
Moneda
Mem.
vendor
vendor
Hashrate
Wt (socket)
Core
Mem.
Core
voltage
voltage
Mem.
voltage
voltage
VDDCI
voltage
voltage
Beneficio neto
Moneda:
ProgPowZ
Mem. vendor:
Hashrate: 13 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.197$
Moneda:
Kawpow
Mem. vendor:
Hashrate: 13 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.172$
Moneda:
Kawpow
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 14.76 MH/s
Wt (socket) 200
Core: 1200
Mem.: 2150
Core voltage: 904
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.171$
Moneda:
Kawpow
Mem. vendor: Samsung K4G80325FC
Hashrate: 14.53 MH/s
Wt (socket) 176
Core: 1200
Mem.: 2100
Core voltage: 876
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.168$
Moneda:
Kawpow
Mem. vendor: Micron MT51J256M32
Hashrate: 14.45 MH/s
Wt (socket) 180
Core: 1180
Mem.: 2100
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.168$
Moneda:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.23 MH/s
Wt (socket) 196
Core: 1156
Mem.: 2050
Core voltage: 844
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.165$
Moneda:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14 MH/s
Wt (socket) 186
Core: 1150
Mem.: 2013
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.162$
Moneda:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 13.89 MH/s
Wt (socket) 155
Core: 1135
Mem.: 2025
Core voltage: 844
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.161$
Moneda:
Kawpow
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 13.34 MH/s
Wt (socket) 125
Core: 1076
Mem.: 1925
Core voltage: 794
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.155$
Moneda:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 12.99 MH/s
Wt (socket) 97
Core: 1050
Mem.: 1950
Core voltage: 775
Mem. voltage:
VDDCI voltage: 750
Beneficio neto
0.151$
Moneda:
Autolykos
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 59.33 MH/s
Wt (socket) 117
Core: 1200
Mem.: 1963
Core voltage: 896
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.121$
Moneda:
Autolykos
Mem. vendor: Samsung K4G80325FC
Hashrate: 58.39 MH/s
Wt (socket) 103
Core: 1200
Mem.: 1920
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.119$
Moneda:
Autolykos
Mem. vendor: Micron MT51J256M32
Hashrate: 58.1 MH/s
Wt (socket) 105
Core: 1180
Mem.: 1925
Core voltage: 830
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.118$
Moneda:
Autolykos
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 57.2 MH/s
Wt (socket) 115
Core: 1156
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.116$
Moneda:
Autolykos
Mem. vendor: Micron MT51J256M3
Hashrate: 56.26 MH/s
Wt (socket) 109
Core: 1150
Mem.: 1850
Core voltage: 806
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.114$
Moneda:
Verthash
Mem. vendor:
Hashrate: 535 kH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.114$
Moneda:
Autolykos
Mem. vendor: Samsung K4G80325FB
Hashrate: 55.82 MH/s
Wt (socket) 91
Core: 1135
Mem.: 1852
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.113$
Moneda:
Autolykos
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 53.61 MH/s
Wt (socket) 73
Core: 1076
Mem.: 1762
Core voltage: 788
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.109$
Moneda:
Autolykos
Mem. vendor: Samsung K4G41325FE
Hashrate: 52.23 MH/s
Wt (socket) 57
Core: 1050
Mem.: 1788
Core voltage: 768
Mem. voltage:
VDDCI voltage: 750
Beneficio neto
0.106$
Moneda:
Autolykos
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 59.33 MH/s
Wt (socket) 117
Core: 1200
Mem.: 1963
Core voltage: 896
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.095$
Moneda:
Autolykos
Mem. vendor: Samsung K4G80325FC
Hashrate: 58.39 MH/s
Wt (socket) 103
Core: 1200
Mem.: 1920
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.094$
Moneda:
Autolykos
Mem. vendor: Micron MT51J256M32
Hashrate: 58.1 MH/s
Wt (socket) 105
Core: 1180
Mem.: 1925
Core voltage: 830
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.093$
Moneda:
Autolykos
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 57.2 MH/s
Wt (socket) 115
Core: 1156
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.092$
Moneda:
Autolykos
Mem. vendor: Micron MT51J256M3
Hashrate: 56.26 MH/s
Wt (socket) 109
Core: 1150
Mem.: 1850
Core voltage: 806
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.09$
Moneda:
Autolykos
Mem. vendor: Samsung K4G80325FB
Hashrate: 55.82 MH/s
Wt (socket) 91
Core: 1135
Mem.: 1852
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.089$
Moneda:
Autolykos
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 53.61 MH/s
Wt (socket) 73
Core: 1076
Mem.: 1762
Core voltage: 788
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.086$
Moneda:
Autolykos
Mem. vendor: Samsung K4G41325FE
Hashrate: 52.23 MH/s
Wt (socket) 57
Core: 1050
Mem.: 1788
Core voltage: 768
Mem. voltage:
VDDCI voltage: 750
Beneficio neto
0.084$
Moneda:
Ethash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 32.57 MH/s
Wt (socket) 151
Core: 1200
Mem.: 2175
Core voltage: 910
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.044$
Moneda:
Etchash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 32.57 MH/s
Wt (socket) 151
Core: 1200
Mem.: 2175
Core voltage: 910
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.044$
Moneda:
Ethash
Mem. vendor: Samsung K4G80325FC
Hashrate: 32.05 MH/s
Wt (socket) 133
Core: 1200
Mem.: 2125
Core voltage: 882
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.044$
Moneda:
Ethash
Mem. vendor: Micron MT51J256M32
Hashrate: 31.89 MH/s
Wt (socket) 136
Core: 1180
Mem.: 2125
Core voltage: 843
Mem. voltage: -
VDDCI voltage: 800
Beneficio neto
0.043$
Moneda:
Etchash
Mem. vendor: Samsung K4G80325FC
Hashrate: 32.05 MH/s
Wt (socket) 133
Core: 1200
Mem.: 2125
Core voltage: 882
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.043$
Moneda:
Etchash
Mem. vendor: Micron MT51J256M32
Hashrate: 31.89 MH/s
Wt (socket) 136
Core: 1180
Mem.: 2125
Core voltage: 843
Mem. voltage: -
VDDCI voltage: 800
Beneficio neto
0.043$
Moneda:
Ethash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 31.4 MH/s
Wt (socket) 148
Core: 1156
Mem.: 2075
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Beneficio neto
0.043$
Moneda:
Etchash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 31.4 MH/s
Wt (socket) 148
Core: 1156
Mem.: 2075
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Beneficio neto
0.042$
Moneda:
Ethash
Mem. vendor: Micron MT51J256M3
Hashrate: 30.88 MH/s
Wt (socket) 140
Core: 1150
Mem.: 2038
Core voltage: 818
Mem. voltage: -
VDDCI voltage: 800
Beneficio neto
0.042$
Moneda:
Etchash
Mem. vendor: Micron MT51J256M3
Hashrate: 30.88 MH/s
Wt (socket) 140
Core: 1150
Mem.: 2038
Core voltage: 818
Mem. voltage: -
VDDCI voltage: 800
Beneficio neto
0.042$
Moneda:
Ethash
Mem. vendor: Samsung K4G80325FB
Hashrate: 30.64 MH/s
Wt (socket) 117
Core: 1135
Mem.: 2050
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Beneficio neto
0.042$
Moneda:
Etchash
Mem. vendor: Samsung K4G80325FB
Hashrate: 30.64 MH/s
Wt (socket) 117
Core: 1135
Mem.: 2050
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Beneficio neto
0.041$
Moneda:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 30.3 MH/s 88.13 MH/s
Wt (socket) 211
Core: 1250
Mem.: 2150
Core voltage: 957
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.041$
Moneda:
Etchash
Heavyhash
Mem. vendor: Samsung K4G80325FC
Hashrate: 29.82 MH/s 88.13 MH/s
Wt (socket) 186
Core: 1250
Mem.: 2100
Core voltage: 927
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.04$
Moneda:
Etchash
Heavyhash
Mem. vendor: Micron MT51J256M32
Hashrate: 29.67 MH/s 88.13 MH/s
Wt (socket) 190
Core: 1229
Mem.: 2100
Core voltage: 886
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.04$
Moneda:
Ethash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 29.43 MH/s
Wt (socket) 94
Core: 1076
Mem.: 1950
Core voltage: 800
Mem. voltage: -
VDDCI voltage: 800
Beneficio neto
0.04$
Moneda:
Etchash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 29.43 MH/s
Wt (socket) 94
Core: 1076
Mem.: 1950
Core voltage: 800
Mem. voltage: -
VDDCI voltage: 800
Beneficio neto
0.04$
Moneda:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.21 MH/s 88.13 MH/s
Wt (socket) 207
Core: 1204
Mem.: 2050
Core voltage: 894
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.039$
Moneda:
Ethash
Mem. vendor: Samsung K4G41325FE
Hashrate: 28.67 MH/s
Wt (socket) 73
Core: 1050
Mem.: 1975
Core voltage: 780
Mem. voltage: -
VDDCI voltage: 750
Beneficio neto
0.039$
Moneda:
Etchash
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 28.73 MH/s 88.13 MH/s
Wt (socket) 196
Core: 1198
Mem.: 2013
Core voltage: 860
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.039$
Moneda:
Etchash
Mem. vendor: Samsung K4G41325FE
Hashrate: 28.67 MH/s
Wt (socket) 73
Core: 1050
Mem.: 1975
Core voltage: 780
Mem. voltage: -
VDDCI voltage: 750
Beneficio neto
0.039$
Moneda:
Etchash
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 28.51 MH/s 88.13 MH/s
Wt (socket) 164
Core: 1182
Mem.: 2025
Core voltage: 894
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.039$
Moneda:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 27.38 MH/s 88.13 MH/s
Wt (socket) 132
Core: 1120
Mem.: 1925
Core voltage: 841
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.037$
Moneda:
Etchash
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 26.67 MH/s 88.13 MH/s
Wt (socket) 102
Core: 1093
Mem.: 1950
Core voltage: 820
Mem. voltage:
VDDCI voltage: 750
Beneficio neto
0.036$
Moneda:
NexaPow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.034$
Moneda:
NexaPow
Mem. vendor: Micron MT51J256M32
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.034$
Moneda:
NexaPow
Mem. vendor: Samsung K4G80325FB
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.034$
Moneda:
NexaPow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.034$
Moneda:
NexaPow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.034$
Moneda:
NexaPow
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.034$
Moneda:
NexaPow
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.034$
Moneda:
NexaPow
Mem. vendor: Samsung K4G80325FC
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Beneficio neto
0.034$
Moneda:
Blake 3
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 0.482 GH/s
Wt (socket) 128
Core: 1265
Mem.: 300
Core voltage: 918
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Blake 3
Mem. vendor: Samsung K4G80325FC
Hashrate: 0.474 GH/s
Wt (socket) 113
Core: 1265
Mem.: 300
Core voltage: 893
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Blake 3
Mem. vendor: Micron MT51J256M32
Hashrate: 0.472 GH/s
Wt (socket) 116
Core: 1244
Mem.: 300
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Blake 3
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 0.464 GH/s
Wt (socket) 126
Core: 1219
Mem.: 300
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Blake 3
Mem. vendor: Micron MT51J256M3
Hashrate: 0.457 GH/s
Wt (socket) 119
Core: 1212
Mem.: 300
Core voltage: 831
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Blake 3
Mem. vendor: Samsung K4G80325FB
Hashrate: 0.453 GH/s
Wt (socket) 99
Core: 1197
Mem.: 300
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Blake 3
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 0.435 GH/s
Wt (socket) 80
Core: 1134
Mem.: 300
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Blake 3
Mem. vendor: Samsung K4G41325FE
Hashrate: 0.424 GH/s
Wt (socket) 76
Core: 1107
Mem.: 300
Core voltage: 793
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0.001$
Moneda:
Heavyhash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 148.94 MH/s
Wt (socket) 132
Core: 1265
Mem.: 300
Core voltage: 923
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0$
Moneda:
Heavyhash
Mem. vendor: Samsung K4G80325FC
Hashrate: 146.56 MH/s
Wt (socket) 116
Core: 1265
Mem.: 300
Core voltage: 894
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0$
Moneda:
Heavyhash
Mem. vendor: Micron MT51J256M32
Hashrate: 145.83 MH/s
Wt (socket) 119
Core: 1244
Mem.: 300
Core voltage: 855
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0$
Moneda:
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 143.59 MH/s
Wt (socket) 130
Core: 1219
Mem.: 300
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0$
Moneda:
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 141.21 MH/s
Wt (socket) 123
Core: 1212
Mem.: 300
Core voltage: 829
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0$
Moneda:
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 140.11 MH/s
Wt (socket) 102
Core: 1197
Mem.: 300
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0$
Moneda:
Heavyhash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 134.58 MH/s
Wt (socket) 82
Core: 1134
Mem.: 300
Core voltage: 811
Mem. voltage:
VDDCI voltage: 800
Beneficio neto
0$
Moneda:
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 131.1 MH/s
Wt (socket) 64
Core: 1107
Mem.: 300
Core voltage: 791
Mem. voltage:
VDDCI voltage: 750
Beneficio neto
0$
Fabricante
AMD
Fecha de lanzamiento
2017
Procesador
Polaris 20
Precio de lanzamiento
169.00$
Precio actual
235.00$
TDP
150W
Tipo de memoria
GDDR5
Memoria
4GB
Ancho de bus
256
Tarjeta de video AMD RX570 de 4 GB en mineria. Especificaciones, precio, hashrate
Fecha y precio de lanzamiento
AMD RX570 se lanzó en 2017. Precio de lanzamiento: 169.00 $. Precio actual aproximado - 235.00 $. Por favor, preste atención al cambio de precio en comparación con el año de lanzamiento de la tarjeta de video, antes de decidir si comprar una tarjeta AMD RX570.
RX570 en mineria
La mejor moneda para extraer con la tarjeta grafica RX570 - Zano, te da una tasa de hash de 13 MH/s. Con la dificultad diaria actual, ganará 0.197 $, por lo que el ROI de RX570 es de 1193 días.
Consumo de RX570
RX570 TDP es de 150 vatios, mientras que en mineria consume 120 vatios en promedio.
