AMD RX570 4 GB
 Moneda 
 Mem.
vendor
vendor
 Hashrate 
Wt (socket)
 Core 
 Mem. 
 Core
voltage
voltage
 Mem.
voltage
voltage
 VDDCI
voltage
voltage
Beneficio neto
Moneda:

ProgPowZ
Mem. vendor:  
Hashrate: 13 MH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0.115$
Moneda:

Kawpow
Mem. vendor:  
Hashrate: 13 MH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0.105$
Moneda:

Kawpow
Mem. vendor: SK Hynix H5GC8H24AJR 
Hashrate: 14.76 MH/s 
Wt (socket) 200 
Core: 1200 
Mem.: 2150 
Core voltage: 904 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.101$
Moneda:

Kawpow
Mem. vendor: Samsung K4G80325FC 
Hashrate: 14.53 MH/s 
Wt (socket) 176 
Core: 1200 
Mem.: 2100 
Core voltage: 876 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.099$
Moneda:

Kawpow
Mem. vendor: Micron MT51J256M32 
Hashrate: 14.45 MH/s 
Wt (socket) 180 
Core: 1180 
Mem.: 2100 
Core voltage: 837 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.099$
Moneda:

Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR 
Hashrate: 14.23 MH/s 
Wt (socket) 196 
Core: 1156 
Mem.: 2050 
Core voltage: 844 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.097$
Moneda:

Kawpow
Mem. vendor: Micron MT51J256M3 
Hashrate: 14 MH/s 
Wt (socket) 186 
Core: 1150 
Mem.: 2013 
Core voltage: 812 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.096$
Moneda:

Kawpow
Mem. vendor: Samsung K4G80325FB 
Hashrate: 13.89 MH/s 
Wt (socket) 155 
Core: 1135 
Mem.: 2025 
Core voltage: 844 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.095$
Moneda:

Kawpow
Mem. vendor: SK Hynix H5GQ8H24MJR 
Hashrate: 13.34 MH/s 
Wt (socket) 125 
Core: 1076 
Mem.: 1925 
Core voltage: 794 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.091$
Moneda:

Kawpow
Mem. vendor: Samsung K4G41325FE 
Hashrate: 12.99 MH/s 
Wt (socket) 97 
Core: 1050 
Mem.: 1950 
Core voltage: 775 
Mem. voltage:  
VDDCI voltage: 750 
Beneficio neto
0.089$
Moneda:

Autolykos
Mem. vendor: SK Hynix H5GC8H24AJR 
Hashrate: 59.33 MH/s 
Wt (socket) 117 
Core: 1200 
Mem.: 1963 
Core voltage: 896 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.056$
Moneda:

Autolykos
Mem. vendor: Samsung K4G80325FC 
Hashrate: 58.39 MH/s 
Wt (socket) 103 
Core: 1200 
Mem.: 1920 
Core voltage: 869 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.055$
Moneda:

Autolykos
Mem. vendor: Micron MT51J256M32 
Hashrate: 58.1 MH/s 
Wt (socket) 105 
Core: 1180 
Mem.: 1925 
Core voltage: 830 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.055$
Moneda:

Autolykos
Mem. vendor: SK Hynix H5GC4H24AJR 
Hashrate: 57.2 MH/s 
Wt (socket) 115 
Core: 1156 
Mem.: 1875 
Core voltage: 837 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.054$
Moneda:

Autolykos
Mem. vendor: Micron MT51J256M3 
Hashrate: 56.26 MH/s 
Wt (socket) 109 
Core: 1150 
Mem.: 1850 
Core voltage: 806 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.053$
Moneda:

Autolykos
Mem. vendor: Samsung K4G80325FB 
Hashrate: 55.82 MH/s 
Wt (socket) 91 
Core: 1135 
Mem.: 1852 
Core voltage: 837 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.053$
Moneda:

Autolykos
Mem. vendor: SK Hynix H5GQ8H24MJR 
Hashrate: 53.61 MH/s 
Wt (socket) 73 
Core: 1076 
Mem.: 1762 
Core voltage: 788 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.051$
Moneda:

Autolykos
Mem. vendor: Samsung K4G41325FE 
Hashrate: 52.23 MH/s 
Wt (socket) 57 
Core: 1050 
Mem.: 1788 
Core voltage: 768 
Mem. voltage:  
VDDCI voltage: 750 
Beneficio neto
0.05$
Moneda:

NexaPow
Mem. vendor: Micron MT51J256M3 
Hashrate: 14.6 MH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0.027$
Moneda:

NexaPow
Mem. vendor: Micron MT51J256M32 
Hashrate: 14.6 MH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0.027$
Moneda:

NexaPow
Mem. vendor: Samsung K4G80325FB 
Hashrate: 14.6 MH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0.027$
Moneda:

NexaPow
Mem. vendor: SK Hynix H5GC4H24AJR 
Hashrate: 14.6 MH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0.027$
Moneda:

NexaPow
Mem. vendor: Samsung K4G41325FE 
Hashrate: 14.6 MH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0.027$
Moneda:

NexaPow
Mem. vendor: SK Hynix H5GQ8H24MJR 
Hashrate: 14.6 MH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0.027$
Moneda:

NexaPow
Mem. vendor: SK Hynix H5GC8H24AJR 
Hashrate: 14.6 MH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0.027$
Moneda:

NexaPow
Mem. vendor: Samsung K4G80325FC 
Hashrate: 14.6 MH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0.027$
Moneda:

Etchash
Mem. vendor: SK Hynix H5GC8H24AJR 
Hashrate: 32.57 MH/s 
Wt (socket) 151 
Core: 1200 
Mem.: 2175 
Core voltage: 910 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.024$
Moneda:

Etchash
Mem. vendor: Samsung K4G80325FC 
Hashrate: 32.05 MH/s 
Wt (socket) 133 
Core: 1200 
Mem.: 2125 
Core voltage: 882 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.024$
Moneda:

Etchash
Mem. vendor: Micron MT51J256M32 
Hashrate: 31.89 MH/s 
Wt (socket) 136 
Core: 1180 
Mem.: 2125 
Core voltage: 843 
Mem. voltage: - 
VDDCI voltage: 800 
Beneficio neto
0.024$
Moneda:

Etchash
Mem. vendor: SK Hynix H5GC4H24AJR 
Hashrate: 31.4 MH/s 
Wt (socket) 148 
Core: 1156 
Mem.: 2075 
Core voltage: 850 
Mem. voltage: - 
VDDCI voltage: 800 
Beneficio neto
0.023$
Moneda:

Etchash
Mem. vendor: Micron MT51J256M3 
Hashrate: 30.88 MH/s 
Wt (socket) 140 
Core: 1150 
Mem.: 2038 
Core voltage: 818 
Mem. voltage: - 
VDDCI voltage: 800 
Beneficio neto
0.023$
Moneda:

Etchash
Mem. vendor: Samsung K4G80325FB 
Hashrate: 30.64 MH/s 
Wt (socket) 117 
Core: 1135 
Mem.: 2050 
Core voltage: 850 
Mem. voltage: - 
VDDCI voltage: 800 
Beneficio neto
0.023$
Moneda:

Ethash
Mem. vendor: SK Hynix H5GC8H24AJR 
Hashrate: 32.57 MH/s 
Wt (socket) 151 
Core: 1200 
Mem.: 2175 
Core voltage: 910 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.022$
Moneda:


Etchash

Heavyhash
Mem. vendor: SK Hynix H5GC8H24AJR 
Hashrate: 30.3 MH/s  88.13 MH/s 
Wt (socket) 211 
Core: 1250 
Mem.: 2150 
Core voltage: 957 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.022$
Moneda:

Ethash
Mem. vendor: Samsung K4G80325FC 
Hashrate: 32.05 MH/s 
Wt (socket) 133 
Core: 1200 
Mem.: 2125 
Core voltage: 882 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.022$
Moneda:


Etchash

Heavyhash
Mem. vendor: Samsung K4G80325FC 
Hashrate: 29.82 MH/s  88.13 MH/s 
Wt (socket) 186 
Core: 1250 
Mem.: 2100 
Core voltage: 927 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.022$
Moneda:

Ethash
Mem. vendor: Micron MT51J256M32 
Hashrate: 31.89 MH/s 
Wt (socket) 136 
Core: 1180 
Mem.: 2125 
Core voltage: 843 
Mem. voltage: - 
VDDCI voltage: 800 
Beneficio neto
0.022$
Moneda:


Etchash

Heavyhash
Mem. vendor: Micron MT51J256M32 
Hashrate: 29.67 MH/s  88.13 MH/s 
Wt (socket) 190 
Core: 1229 
Mem.: 2100 
Core voltage: 886 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.022$
Moneda:

Etchash
Mem. vendor: SK Hynix H5GQ8H24MJR 
Hashrate: 29.43 MH/s 
Wt (socket) 94 
Core: 1076 
Mem.: 1950 
Core voltage: 800 
Mem. voltage: - 
VDDCI voltage: 800 
Beneficio neto
0.022$
Moneda:

Ethash
Mem. vendor: SK Hynix H5GC4H24AJR 
Hashrate: 31.4 MH/s 
Wt (socket) 148 
Core: 1156 
Mem.: 2075 
Core voltage: 850 
Mem. voltage: - 
VDDCI voltage: 800 
Beneficio neto
0.022$
Moneda:


Etchash

Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR 
Hashrate: 29.21 MH/s  88.13 MH/s 
Wt (socket) 207 
Core: 1204 
Mem.: 2050 
Core voltage: 894 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.022$
Moneda:

Ethash
Mem. vendor: Micron MT51J256M3 
Hashrate: 30.88 MH/s 
Wt (socket) 140 
Core: 1150 
Mem.: 2038 
Core voltage: 818 
Mem. voltage: - 
VDDCI voltage: 800 
Beneficio neto
0.021$
Moneda:


Etchash

Heavyhash
Mem. vendor: Micron MT51J256M3 
Hashrate: 28.73 MH/s  88.13 MH/s 
Wt (socket) 196 
Core: 1198 
Mem.: 2013 
Core voltage: 860 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.021$
Moneda:

Etchash
Mem. vendor: Samsung K4G41325FE 
Hashrate: 28.67 MH/s 
Wt (socket) 73 
Core: 1050 
Mem.: 1975 
Core voltage: 780 
Mem. voltage: - 
VDDCI voltage: 750 
Beneficio neto
0.021$
Moneda:

Ethash
Mem. vendor: Samsung K4G80325FB 
Hashrate: 30.64 MH/s 
Wt (socket) 117 
Core: 1135 
Mem.: 2050 
Core voltage: 850 
Mem. voltage: - 
VDDCI voltage: 800 
Beneficio neto
0.021$
Moneda:


Etchash

Heavyhash
Mem. vendor: Samsung K4G80325FB 
Hashrate: 28.51 MH/s  88.13 MH/s 
Wt (socket) 164 
Core: 1182 
Mem.: 2025 
Core voltage: 894 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.021$
Moneda:

Ethash
Mem. vendor: SK Hynix H5GQ8H24MJR 
Hashrate: 29.43 MH/s 
Wt (socket) 94 
Core: 1076 
Mem.: 1950 
Core voltage: 800 
Mem. voltage: - 
VDDCI voltage: 800 
Beneficio neto
0.02$
Moneda:


Etchash

Heavyhash
Mem. vendor: SK Hynix H5GQ8H24MJR 
Hashrate: 27.38 MH/s  88.13 MH/s 
Wt (socket) 132 
Core: 1120 
Mem.: 1925 
Core voltage: 841 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0.02$
Moneda:

Ethash
Mem. vendor: Samsung K4G41325FE 
Hashrate: 28.67 MH/s 
Wt (socket) 73 
Core: 1050 
Mem.: 1975 
Core voltage: 780 
Mem. voltage: - 
VDDCI voltage: 750 
Beneficio neto
0.02$
Moneda:


Etchash

Heavyhash
Mem. vendor: Samsung K4G41325FE 
Hashrate: 26.67 MH/s  88.13 MH/s 
Wt (socket) 102 
Core: 1093 
Mem.: 1950 
Core voltage: 820 
Mem. voltage:  
VDDCI voltage: 750 
Beneficio neto
0.02$
Moneda:

Blake 3
Mem. vendor: SK Hynix H5GC8H24AJR 
Hashrate: 0.482 GH/s 
Wt (socket) 128 
Core: 1265 
Mem.: 300 
Core voltage: 918 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Blake 3
Mem. vendor: Samsung K4G80325FC 
Hashrate: 0.474 GH/s 
Wt (socket) 113 
Core: 1265 
Mem.: 300 
Core voltage: 893 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Blake 3
Mem. vendor: Micron MT51J256M32 
Hashrate: 0.472 GH/s 
Wt (socket) 116 
Core: 1244 
Mem.: 300 
Core voltage: 856 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Blake 3
Mem. vendor: SK Hynix H5GC4H24AJR 
Hashrate: 0.464 GH/s 
Wt (socket) 126 
Core: 1219 
Mem.: 300 
Core voltage: 862 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Blake 3
Mem. vendor: Micron MT51J256M3 
Hashrate: 0.457 GH/s 
Wt (socket) 119 
Core: 1212 
Mem.: 300 
Core voltage: 831 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Blake 3
Mem. vendor: Samsung K4G80325FB 
Hashrate: 0.453 GH/s 
Wt (socket) 99 
Core: 1197 
Mem.: 300 
Core voltage: 862 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Blake 3
Mem. vendor: SK Hynix H5GQ8H24MJR 
Hashrate: 0.435 GH/s 
Wt (socket) 80 
Core: 1134 
Mem.: 300 
Core voltage: 812 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Blake 3
Mem. vendor: Samsung K4G41325FE 
Hashrate: 0.424 GH/s 
Wt (socket) 76 
Core: 1107 
Mem.: 300 
Core voltage: 793 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Verthash
Mem. vendor:  
Hashrate: 535 kH/s 
Wt (socket)  
Core:  
Mem.:  
Core voltage:  
Mem. voltage:  
VDDCI voltage:  
Beneficio neto
0$
Moneda:

Heavyhash
Mem. vendor: SK Hynix H5GC8H24AJR 
Hashrate: 148.94 MH/s 
Wt (socket) 132 
Core: 1265 
Mem.: 300 
Core voltage: 923 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Heavyhash
Mem. vendor: Samsung K4G80325FC 
Hashrate: 146.56 MH/s 
Wt (socket) 116 
Core: 1265 
Mem.: 300 
Core voltage: 894 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Heavyhash
Mem. vendor: Micron MT51J256M32 
Hashrate: 145.83 MH/s 
Wt (socket) 119 
Core: 1244 
Mem.: 300 
Core voltage: 855 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR 
Hashrate: 143.59 MH/s 
Wt (socket) 130 
Core: 1219 
Mem.: 300 
Core voltage: 862 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Heavyhash
Mem. vendor: Micron MT51J256M3 
Hashrate: 141.21 MH/s 
Wt (socket) 123 
Core: 1212 
Mem.: 300 
Core voltage: 829 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Heavyhash
Mem. vendor: Samsung K4G80325FB 
Hashrate: 140.11 MH/s 
Wt (socket) 102 
Core: 1197 
Mem.: 300 
Core voltage: 862 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Heavyhash
Mem. vendor: SK Hynix H5GQ8H24MJR 
Hashrate: 134.58 MH/s 
Wt (socket) 82 
Core: 1134 
Mem.: 300 
Core voltage: 811 
Mem. voltage:  
VDDCI voltage: 800 
Beneficio neto
0$
Moneda:

Heavyhash
Mem. vendor: Samsung K4G41325FE 
Hashrate: 131.1 MH/s 
Wt (socket) 64 
Core: 1107 
Mem.: 300 
Core voltage: 791 
Mem. voltage:  
VDDCI voltage: 750 
Beneficio neto
0$
 Fabricante 
AMD
 Fecha de lanzamiento 
2017
 Procesador 
Polaris 20
 Precio de lanzamiento 
169.00$
 Precio actual 
235.00$
 TDP 
150W
 Tipo de memoria 
GDDR5
 Memoria 
4GB
 Ancho de bus 
256
Tarjeta de video AMD RX570 de 4 GB en mineria. Especificaciones, precio, hashrate
Fecha y precio de lanzamiento
AMD RX570 se lanzó en 2017. Precio de lanzamiento: 169.00 $. Precio actual aproximado - 235.00 $. Por favor, preste atención al cambio de precio en comparación con el año de lanzamiento de la tarjeta de video, antes de decidir si comprar una tarjeta AMD RX570.
RX570 en mineria
La mejor moneda para extraer con la tarjeta grafica RX570 - Zano, te da una tasa de hash de 13 MH/s. Con la dificultad diaria actual, ganará 0.115 $, por lo que el ROI de RX570 es de 2036 días.
Consumo de RX570
RX570 TDP es de 150 vatios, mientras que en mineria consume 120 vatios en promedio.


















