AMD RX580 4 GB
Mince
Mem.
vendor
vendor
Hashrate
Wt (socket)
Core
Mem.
Core
voltage
voltage
Mem.
voltage
voltage
VDDCI
voltage
voltage
Čistý zisk
Mince:
Kawpow
Mem. vendor:
Hashrate: 14 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.244$
Mince:
ProgPowZ
Mem. vendor:
Hashrate: 14 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.242$
Mince:
Kawpow
Mem. vendor: Micron MT51J256M32
Hashrate: 15.67 MH/s
Wt (socket) 176
Core: 1170
Mem.: 2075
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.235$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 15.52 MH/s
Wt (socket) 179
Core: 1160
Mem.: 2100
Core voltage: 806
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.233$
Mince:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 15.28 MH/s
Wt (socket) 176
Core: 1156
Mem.: 2050
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.229$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 15.23 MH/s
Wt (socket) 164
Core: 1150
Mem.: 2055
Core voltage: 781
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.229$
Mince:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 15.07 MH/s
Wt (socket) 168
Core: 1150
Mem.: 2013
Core voltage: 818
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.226$
Mince:
Kawpow
Mem. vendor: Samsung K4G80325FC
Hashrate: 15.05 MH/s
Wt (socket) 163
Core: 1150
Mem.: 2025
Core voltage: 818
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.226$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 14.97 MH/s
Wt (socket) 178
Core: 1166
Mem.: 2063
Core voltage: 818
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.225$
Mince:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.65 MH/s
Wt (socket) 188
Core: 1120
Mem.: 1975
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.22$
Mince:
Kawpow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 14.43 MH/s
Wt (socket) 139
Core: 1090
Mem.: 1738
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.217$
Mince:
Autolykos
Mem. vendor: Micron MT51J256M32
Hashrate: 63 MH/s
Wt (socket) 103
Core: 1170
Mem.: 1900
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.153$
Mince:
Autolykos
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 62.37 MH/s
Wt (socket) 105
Core: 1160
Mem.: 1925
Core voltage: 800
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.152$
Mince:
Autolykos
Mem. vendor: Samsung K4G41325FE
Hashrate: 61.41 MH/s
Wt (socket) 103
Core: 1156
Mem.: 1875
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.15$
Mince:
Autolykos
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 61.23 MH/s
Wt (socket) 96
Core: 1150
Mem.: 1875
Core voltage: 775
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.149$
Mince:
Autolykos
Mem. vendor: Samsung K4G80325FB
Hashrate: 60.57 MH/s
Wt (socket) 98
Core: 1150
Mem.: 1838
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.148$
Mince:
Autolykos
Mem. vendor: Samsung K4G80325FC
Hashrate: 60.51 MH/s
Wt (socket) 95
Core: 1150
Mem.: 1850
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.147$
Mince:
Autolykos
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 60.18 MH/s
Wt (socket) 104
Core: 1166
Mem.: 1888
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.147$
Mince:
Autolykos
Mem. vendor: Micron MT51J256M3
Hashrate: 58.9 MH/s
Wt (socket) 110
Core: 1120
Mem.: 1800
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.143$
Mince:
Autolykos
Mem. vendor: Elpida EDW4032BABG
Hashrate: 57.98 MH/s
Wt (socket) 81
Core: 1090
Mem.: 1738
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.141$
Mince:
Autolykos
Mem. vendor: Micron MT51J256M32
Hashrate: 63 MH/s
Wt (socket) 103
Core: 1170
Mem.: 1900
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.131$
Mince:
Autolykos
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 62.37 MH/s
Wt (socket) 105
Core: 1160
Mem.: 1925
Core voltage: 800
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.129$
Mince:
Autolykos
Mem. vendor: Samsung K4G41325FE
Hashrate: 61.41 MH/s
Wt (socket) 103
Core: 1156
Mem.: 1875
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.127$
Mince:
Autolykos
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 61.23 MH/s
Wt (socket) 96
Core: 1150
Mem.: 1875
Core voltage: 775
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.127$
Mince:
Autolykos
Mem. vendor: Samsung K4G80325FB
Hashrate: 60.57 MH/s
Wt (socket) 98
Core: 1150
Mem.: 1838
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.126$
Mince:
Autolykos
Mem. vendor: Samsung K4G80325FC
Hashrate: 60.51 MH/s
Wt (socket) 95
Core: 1150
Mem.: 1850
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.125$
Mince:
Autolykos
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 60.18 MH/s
Wt (socket) 104
Core: 1166
Mem.: 1888
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.125$
Mince:
Autolykos
Mem. vendor: Micron MT51J256M3
Hashrate: 58.9 MH/s
Wt (socket) 110
Core: 1120
Mem.: 1800
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.122$
Mince:
Verthash
Mem. vendor:
Hashrate: 535 kH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.122$
Mince:
Autolykos
Mem. vendor: Elpida EDW4032BABG
Hashrate: 57.98 MH/s
Wt (socket) 81
Core: 1090
Mem.: 1738
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.12$
Mince:
Ethash
Mem. vendor: Micron MT51J256M32
Hashrate: 32.16 MH/s
Wt (socket) 133
Core: 1170
Mem.: 2100
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.066$
Mince:
Etchash
Mem. vendor: Micron MT51J256M32
Hashrate: 32.16 MH/s
Wt (socket) 133
Core: 1170
Mem.: 2100
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.065$
Mince:
Ethash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 31.84 MH/s
Wt (socket) 135
Core: 1160
Mem.: 2125
Core voltage: 812
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.065$
Mince:
Etchash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 31.84 MH/s
Wt (socket) 135
Core: 1160
Mem.: 2125
Core voltage: 812
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.064$
Mince:
Ethash
Mem. vendor: Samsung K4G41325FE
Hashrate: 31.35 MH/s
Wt (socket) 133
Core: 1156
Mem.: 2075
Core voltage: 868
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.064$
Mince:
Ethash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 31.26 MH/s
Wt (socket) 124
Core: 1150
Mem.: 2080
Core voltage: 787
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.064$
Mince:
Etchash
Mem. vendor: Samsung K4G41325FE
Hashrate: 31.35 MH/s
Wt (socket) 133
Core: 1156
Mem.: 2075
Core voltage: 868
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.063$
Mince:
Etchash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 31.26 MH/s
Wt (socket) 124
Core: 1150
Mem.: 2080
Core voltage: 787
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.063$
Mince:
Ethash
Mem. vendor: Samsung K4G80325FB
Hashrate: 30.92 MH/s
Wt (socket) 127
Core: 1150
Mem.: 2038
Core voltage: 825
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.063$
Mince:
Ethash
Mem. vendor: Samsung K4G80325FC
Hashrate: 30.89 MH/s
Wt (socket) 123
Core: 1150
Mem.: 2050
Core voltage: 825
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.063$
Mince:
Etchash
Mem. vendor: Samsung K4G80325FB
Hashrate: 30.92 MH/s
Wt (socket) 127
Core: 1150
Mem.: 2038
Core voltage: 825
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.063$
Mince:
Ethash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 30.72 MH/s
Wt (socket) 134
Core: 1166
Mem.: 2088
Core voltage: 825
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.063$
Mince:
Etchash
Mem. vendor: Samsung K4G80325FC
Hashrate: 30.89 MH/s
Wt (socket) 123
Core: 1150
Mem.: 2050
Core voltage: 825
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.063$
Mince:
Etchash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 30.72 MH/s
Wt (socket) 134
Core: 1166
Mem.: 2088
Core voltage: 825
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.062$
Mince:
Ethash
Mem. vendor: Micron MT51J256M3
Hashrate: 30.07 MH/s
Wt (socket) 142
Core: 1120
Mem.: 2000
Core voltage: 875
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.061$
Mince:
Etchash
Mem. vendor: Micron MT51J256M3
Hashrate: 30.07 MH/s
Wt (socket) 142
Core: 1120
Mem.: 2000
Core voltage: 875
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.061$
Mince:
Etchash
Heavyhash
Mem. vendor: Micron MT51J256M32
Hashrate: 29.92 MH/s 117.5 MH/s
Wt (socket) 186
Core: 1218
Mem.: 2075
Core voltage: 893
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.061$
Mince:
Ethash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 29.6 MH/s
Wt (socket) 105
Core: 1090
Mem.: 1925
Core voltage: 856
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.06$
Mince:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 29.62 MH/s 117.5 MH/s
Wt (socket) 189
Core: 1208
Mem.: 2100
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.06$
Mince:
Etchash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 29.6 MH/s
Wt (socket) 105
Core: 1090
Mem.: 1925
Core voltage: 856
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.06$
Mince:
NexaPow
Mem. vendor:
Hashrate: 16.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.059$
Mince:
Etchash
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 29.17 MH/s 117.5 MH/s
Wt (socket) 186
Core: 1204
Mem.: 2050
Core voltage: 912
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.059$
Mince:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.08 MH/s 117.5 MH/s
Wt (socket) 174
Core: 1198
Mem.: 2050
Core voltage: 825
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.059$
Mince:
Etchash
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 28.77 MH/s 117.5 MH/s
Wt (socket) 178
Core: 1198
Mem.: 2013
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.058$
Mince:
Etchash
Heavyhash
Mem. vendor: Samsung K4G80325FC
Hashrate: 28.74 MH/s 117.5 MH/s
Wt (socket) 172
Core: 1198
Mem.: 2025
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.058$
Mince:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 28.58 MH/s 117.5 MH/s
Wt (socket) 188
Core: 1214
Mem.: 2063
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.058$
Mince:
Etchash
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 27.98 MH/s 117.5 MH/s
Wt (socket) 199
Core: 1166
Mem.: 1975
Core voltage: 918
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.057$
Mince:
Etchash
Heavyhash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 27.54 MH/s 117.5 MH/s
Wt (socket) 147
Core: 1135
Mem.: 1900
Core voltage: 900
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.056$
Mince:
Blake 3
Mem. vendor: Micron MT51J256M32
Hashrate: 0.54 GH/s
Wt (socket) 113
Core: 1233
Mem.: 300
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Blake 3
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 0.535 GH/s
Wt (socket) 115
Core: 1223
Mem.: 300
Core voltage: 825
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Blake 3
Mem. vendor: Samsung K4G41325FE
Hashrate: 0.527 GH/s
Wt (socket) 113
Core: 1219
Mem.: 300
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Blake 3
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 0.525 GH/s
Wt (socket) 105
Core: 1212
Mem.: 300
Core voltage: 800
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Blake 3
Mem. vendor: Samsung K4G80325FB
Hashrate: 0.52 GH/s
Wt (socket) 108
Core: 1212
Mem.: 300
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Blake 3
Mem. vendor: Samsung K4G80325FC
Hashrate: 0.519 GH/s
Wt (socket) 105
Core: 1212
Mem.: 300
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Blake 3
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 0.516 GH/s
Wt (socket) 114
Core: 1229
Mem.: 300
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Blake 3
Mem. vendor: Micron MT51J256M3
Hashrate: 0.505 GH/s
Wt (socket) 121
Core: 1181
Mem.: 300
Core voltage: 887
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Blake 3
Mem. vendor: Elpida EDW4032BABG
Hashrate: 0.497 GH/s
Wt (socket) 89
Core: 1149
Mem.: 300
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Heavyhash
Mem. vendor: Micron MT51J256M32
Hashrate: 173.01 MH/s
Wt (socket) 116
Core: 1233
Mem.: 300
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0$
Mince:
Heavyhash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 171.29 MH/s
Wt (socket) 118
Core: 1223
Mem.: 300
Core voltage: 825
Mem. voltage:
VDDCI voltage: 770
Čistý zisk
0$
Mince:
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 168.66 MH/s
Wt (socket) 116
Core: 1219
Mem.: 300
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0$
Mince:
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 168.17 MH/s
Wt (socket) 109
Core: 1212
Mem.: 300
Core voltage: 800
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0$
Mince:
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 166.34 MH/s
Wt (socket) 111
Core: 1212
Mem.: 300
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0$
Mince:
Heavyhash
Mem. vendor: Samsung K4G80325FC
Hashrate: 166.18 MH/s
Wt (socket) 108
Core: 1212
Mem.: 300
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0$
Mince:
Heavyhash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 165.27 MH/s
Wt (socket) 117
Core: 1229
Mem.: 300
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0$
Mince:
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 161.77 MH/s
Wt (socket) 124
Core: 1181
Mem.: 300
Core voltage: 887
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0$
Mince:
Heavyhash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 159.24 MH/s
Wt (socket) 92
Core: 1149
Mem.: 300
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0$
Výrobce
AMD
Datum vydání
2017
Procesor
Polaris 20
Vyvolávací cena
229.00$
Aktuální cena
235.00$
TDP
185W
Typ paměti
GDDR5
Paměť
4GB
Šířka autobusu
256
4 GB grafická kartaAMD RX580. Specifikace, cena, hashrate
Datum vydání a cena
AMD RX580 byla vydána v roce 2017. Spouštěcí cena - 229.00 $. Aktuální přibližná cena - 235.00 $. Před rozhodnutím, zda si koupit kartu AMD RX580, věnujte pozornost změně ceny oproti roku vydání grafické karty.
RX580 v těžbě
Nejlepší mince, kterou můžete těžit s RX580 - Neurai, vám dává 14 MH/s hashrate. Při současné denní obtížnosti vyděláte 0.244 $, takže ROI RX580 je 965 dní.
Spotřeba RX580
RX580 TDP má 185 wattů, zatímco při těžbě spotřebuje v průměru 148 wattů.
