AMD RX570 8 GB
Mince
Mem.
vendor
vendor
Hashrate
Wt (socket)
Core
Mem.
Core
voltage
voltage
Mem.
voltage
voltage
VDDCI
voltage
voltage
Čistý zisk
Mince:
Kawpow
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 14.76 MH/s
Wt (socket) 200
Core: 1200
Mem.: 2150
Core voltage: 904
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.292$
Mince:
Kawpow
Mem. vendor: Samsung K4G80325FC
Hashrate: 14.53 MH/s
Wt (socket) 176
Core: 1200
Mem.: 2100
Core voltage: 876
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.288$
Mince:
Kawpow
Mem. vendor: Micron MT51J256M32
Hashrate: 14.45 MH/s
Wt (socket) 180
Core: 1180
Mem.: 2100
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.286$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.23 MH/s
Wt (socket) 196
Core: 1156
Mem.: 2050
Core voltage: 844
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.282$
Mince:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14 MH/s
Wt (socket) 186
Core: 1150
Mem.: 2013
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.277$
Mince:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 13.89 MH/s
Wt (socket) 155
Core: 1135
Mem.: 2025
Core voltage: 844
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.275$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 13.34 MH/s
Wt (socket) 125
Core: 1076
Mem.: 1925
Core voltage: 794
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.264$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 14.76 MH/s
Wt (socket) 200
Core: 1200
Mem.: 2150
Core voltage: 904
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.258$
Mince:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 12.99 MH/s
Wt (socket) 97
Core: 1050
Mem.: 1950
Core voltage: 775
Mem. voltage:
VDDCI voltage: 750
Čistý zisk
0.257$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 14.76 MH/s
Wt (socket) 200
Core: 1200
Mem.: 2150
Core voltage: 904
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.255$
Mince:
Kawpow
Mem. vendor: Samsung K4G80325FC
Hashrate: 14.53 MH/s
Wt (socket) 176
Core: 1200
Mem.: 2100
Core voltage: 876
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.254$
Mince:
Kawpow
Mem. vendor: Micron MT51J256M32
Hashrate: 14.45 MH/s
Wt (socket) 180
Core: 1180
Mem.: 2100
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.253$
Mince:
Kawpow
Mem. vendor: Samsung K4G80325FC
Hashrate: 14.53 MH/s
Wt (socket) 176
Core: 1200
Mem.: 2100
Core voltage: 876
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.251$
Mince:
Kawpow
Mem. vendor: Micron MT51J256M32
Hashrate: 14.45 MH/s
Wt (socket) 180
Core: 1180
Mem.: 2100
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.25$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.23 MH/s
Wt (socket) 196
Core: 1156
Mem.: 2050
Core voltage: 844
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.249$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.23 MH/s
Wt (socket) 196
Core: 1156
Mem.: 2050
Core voltage: 844
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.246$
Mince:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14 MH/s
Wt (socket) 186
Core: 1150
Mem.: 2013
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.245$
Mince:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 13.89 MH/s
Wt (socket) 155
Core: 1135
Mem.: 2025
Core voltage: 844
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.243$
Mince:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14 MH/s
Wt (socket) 186
Core: 1150
Mem.: 2013
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.242$
Mince:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 13.89 MH/s
Wt (socket) 155
Core: 1135
Mem.: 2025
Core voltage: 844
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.24$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 13.34 MH/s
Wt (socket) 125
Core: 1076
Mem.: 1925
Core voltage: 794
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.233$
Mince:
Kawpow
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 13.34 MH/s
Wt (socket) 125
Core: 1076
Mem.: 1925
Core voltage: 794
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.231$
Mince:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 12.99 MH/s
Wt (socket) 97
Core: 1050
Mem.: 1950
Core voltage: 775
Mem. voltage:
VDDCI voltage: 750
Čistý zisk
0.227$
Mince:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 12.99 MH/s
Wt (socket) 97
Core: 1050
Mem.: 1950
Core voltage: 775
Mem. voltage:
VDDCI voltage: 750
Čistý zisk
0.225$
Mince:
Kawpow
Mem. vendor:
Hashrate: 13 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.217$
Mince:
FiroPow
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 14.76 MH/s
Wt (socket) 196
Core: 1200
Mem.: 2150
Core voltage: 904
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.197$
Mince:
FiroPow
Mem. vendor: Samsung K4G80325FC
Hashrate: 14.53 MH/s
Wt (socket) 172
Core: 1200
Mem.: 2100
Core voltage: 876
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.193$
Mince:
Verthash
Mem. vendor:
Hashrate: 535 kH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.193$
Mince:
FiroPow
Mem. vendor: Micron MT51J256M32
Hashrate: 14.45 MH/s
Wt (socket) 176
Core: 1180
Mem.: 2100
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.192$
Mince:
FiroPow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.23 MH/s
Wt (socket) 192
Core: 1156
Mem.: 2050
Core voltage: 844
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.189$
Mince:
FiroPow
Mem. vendor: Micron MT51J256M3
Hashrate: 14 MH/s
Wt (socket) 182
Core: 1150
Mem.: 2013
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.186$
Mince:
FiroPow
Mem. vendor: Samsung K4G80325FB
Hashrate: 13.89 MH/s
Wt (socket) 151
Core: 1135
Mem.: 2025
Core voltage: 844
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.185$
Mince:
FiroPow
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 13.34 MH/s
Wt (socket) 121
Core: 1076
Mem.: 1925
Core voltage: 794
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.178$
Mince:
FiroPow
Mem. vendor: Samsung K4G41325FE
Hashrate: 12.99 MH/s
Wt (socket) 94
Core: 1050
Mem.: 1950
Core voltage: 775
Mem. voltage:
VDDCI voltage: 750
Čistý zisk
0.173$
Mince:
Autolykos
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 59.33 MH/s
Wt (socket) 117
Core: 1200
Mem.: 1963
Core voltage: 896
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.107$
Mince:
Autolykos
Mem. vendor: Samsung K4G80325FC
Hashrate: 58.39 MH/s
Wt (socket) 103
Core: 1200
Mem.: 1920
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.106$
Mince:
Autolykos
Mem. vendor: Micron MT51J256M32
Hashrate: 58.1 MH/s
Wt (socket) 105
Core: 1180
Mem.: 1925
Core voltage: 830
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.105$
Mince:
Autolykos
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 57.2 MH/s
Wt (socket) 115
Core: 1156
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.103$
Mince:
Ethash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 32.57 MH/s
Wt (socket) 151
Core: 1200
Mem.: 2175
Core voltage: 910
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.103$
Mince:
Autolykos
Mem. vendor: Micron MT51J256M3
Hashrate: 56.26 MH/s
Wt (socket) 109
Core: 1150
Mem.: 1850
Core voltage: 806
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.102$
Mince:
Ethash
Mem. vendor: Samsung K4G80325FC
Hashrate: 32.05 MH/s
Wt (socket) 133
Core: 1200
Mem.: 2125
Core voltage: 882
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.102$
Mince:
Ethash
Mem. vendor: Micron MT51J256M32
Hashrate: 31.89 MH/s
Wt (socket) 136
Core: 1180
Mem.: 2125
Core voltage: 843
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.101$
Mince:
Autolykos
Mem. vendor: Samsung K4G80325FB
Hashrate: 55.82 MH/s
Wt (socket) 91
Core: 1135
Mem.: 1852
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.101$
Mince:
Ethash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 31.4 MH/s
Wt (socket) 148
Core: 1156
Mem.: 2075
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.099$
Mince:
Ethash
Mem. vendor: Micron MT51J256M3
Hashrate: 30.88 MH/s
Wt (socket) 140
Core: 1150
Mem.: 2038
Core voltage: 818
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.098$
Mince:
Ethash
Mem. vendor: Samsung K4G80325FB
Hashrate: 30.64 MH/s
Wt (socket) 117
Core: 1135
Mem.: 2050
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.097$
Mince:
Autolykos
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 53.61 MH/s
Wt (socket) 73
Core: 1076
Mem.: 1762
Core voltage: 788
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.097$
Mince:
Autolykos
Mem. vendor: Samsung K4G41325FE
Hashrate: 52.23 MH/s
Wt (socket) 57
Core: 1050
Mem.: 1788
Core voltage: 768
Mem. voltage:
VDDCI voltage: 750
Čistý zisk
0.094$
Mince:
Ethash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 29.43 MH/s
Wt (socket) 94
Core: 1076
Mem.: 1950
Core voltage: 800
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.093$
Mince:
Ethash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 32.57 MH/s
Wt (socket) 151
Core: 1200
Mem.: 2175
Core voltage: 910
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.091$
Mince:
Ethash
Mem. vendor: Samsung K4G41325FE
Hashrate: 28.67 MH/s
Wt (socket) 73
Core: 1050
Mem.: 1975
Core voltage: 780
Mem. voltage: -
VDDCI voltage: 750
Čistý zisk
0.091$
Mince:
Ethash
Mem. vendor: Samsung K4G80325FC
Hashrate: 32.05 MH/s
Wt (socket) 133
Core: 1200
Mem.: 2125
Core voltage: 882
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.09$
Mince:
Ethash
Mem. vendor: Micron MT51J256M32
Hashrate: 31.89 MH/s
Wt (socket) 136
Core: 1180
Mem.: 2125
Core voltage: 843
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.089$
Mince:
Ethash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 31.4 MH/s
Wt (socket) 148
Core: 1156
Mem.: 2075
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.088$
Mince:
Ethash
Mem. vendor: Micron MT51J256M3
Hashrate: 30.88 MH/s
Wt (socket) 140
Core: 1150
Mem.: 2038
Core voltage: 818
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.087$
Mince:
Ethash
Mem. vendor: Samsung K4G80325FB
Hashrate: 30.64 MH/s
Wt (socket) 117
Core: 1135
Mem.: 2050
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.086$
Mince:
Ethash
Heavyhash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 30.3 MH/s 88.13 MH/s
Wt (socket) 211
Core: 1250
Mem.: 2150
Core voltage: 957
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.085$
Mince:
Etchash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 32.57 MH/s
Wt (socket) 151
Core: 1200
Mem.: 2175
Core voltage: 910
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.084$
Mince:
Ethash
Heavyhash
Mem. vendor: Samsung K4G80325FC
Hashrate: 29.82 MH/s 88.13 MH/s
Wt (socket) 186
Core: 1250
Mem.: 2100
Core voltage: 927
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.084$
Mince:
Ethash
Heavyhash
Mem. vendor: Micron MT51J256M32
Hashrate: 29.67 MH/s 88.13 MH/s
Wt (socket) 190
Core: 1229
Mem.: 2100
Core voltage: 886
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.084$
Mince:
Etchash
Mem. vendor: Samsung K4G80325FC
Hashrate: 32.05 MH/s
Wt (socket) 133
Core: 1200
Mem.: 2125
Core voltage: 882
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.083$
Mince:
Etchash
Mem. vendor: Micron MT51J256M32
Hashrate: 31.89 MH/s
Wt (socket) 136
Core: 1180
Mem.: 2125
Core voltage: 843
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.083$
Mince:
Ethash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 29.43 MH/s
Wt (socket) 94
Core: 1076
Mem.: 1950
Core voltage: 800
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.082$
Mince:
Ethash
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.21 MH/s 88.13 MH/s
Wt (socket) 207
Core: 1204
Mem.: 2050
Core voltage: 894
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.082$
Mince:
Etchash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 31.4 MH/s
Wt (socket) 148
Core: 1156
Mem.: 2075
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.081$
Mince:
Ethash
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 28.73 MH/s 88.13 MH/s
Wt (socket) 196
Core: 1198
Mem.: 2013
Core voltage: 860
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.081$
Mince:
Ethash
Mem. vendor: Samsung K4G41325FE
Hashrate: 28.67 MH/s
Wt (socket) 73
Core: 1050
Mem.: 1975
Core voltage: 780
Mem. voltage: -
VDDCI voltage: 750
Čistý zisk
0.08$
Mince:
Ethash
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 28.51 MH/s 88.13 MH/s
Wt (socket) 164
Core: 1182
Mem.: 2025
Core voltage: 894
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.08$
Mince:
Etchash
Mem. vendor: Micron MT51J256M3
Hashrate: 30.88 MH/s
Wt (socket) 140
Core: 1150
Mem.: 2038
Core voltage: 818
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.08$
Mince:
Etchash
Mem. vendor: Samsung K4G80325FB
Hashrate: 30.64 MH/s
Wt (socket) 117
Core: 1135
Mem.: 2050
Core voltage: 850
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.079$
Mince:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 30.3 MH/s 88.13 MH/s
Wt (socket) 211
Core: 1250
Mem.: 2150
Core voltage: 957
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.079$
Mince:
Etchash
Heavyhash
Mem. vendor: Samsung K4G80325FC
Hashrate: 29.82 MH/s 88.13 MH/s
Wt (socket) 186
Core: 1250
Mem.: 2100
Core voltage: 927
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.078$
Mince:
Etchash
Heavyhash
Mem. vendor: Micron MT51J256M32
Hashrate: 29.67 MH/s 88.13 MH/s
Wt (socket) 190
Core: 1229
Mem.: 2100
Core voltage: 886
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.077$
Mince:
Ethash
Heavyhash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 27.38 MH/s 88.13 MH/s
Wt (socket) 132
Core: 1120
Mem.: 1925
Core voltage: 841
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.077$
Mince:
Etchash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 29.43 MH/s
Wt (socket) 94
Core: 1076
Mem.: 1950
Core voltage: 800
Mem. voltage: -
VDDCI voltage: 800
Čistý zisk
0.076$
Mince:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.21 MH/s 88.13 MH/s
Wt (socket) 207
Core: 1204
Mem.: 2050
Core voltage: 894
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.076$
Mince:
Ethash
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 26.67 MH/s 88.13 MH/s
Wt (socket) 102
Core: 1093
Mem.: 1950
Core voltage: 820
Mem. voltage:
VDDCI voltage: 750
Čistý zisk
0.075$
Mince:
Etchash
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 28.73 MH/s 88.13 MH/s
Wt (socket) 196
Core: 1198
Mem.: 2013
Core voltage: 860
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.075$
Mince:
Etchash
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 28.51 MH/s 88.13 MH/s
Wt (socket) 164
Core: 1182
Mem.: 2025
Core voltage: 894
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.074$
Mince:
Etchash
Mem. vendor: Samsung K4G41325FE
Hashrate: 28.67 MH/s
Wt (socket) 73
Core: 1050
Mem.: 1975
Core voltage: 780
Mem. voltage: -
VDDCI voltage: 750
Čistý zisk
0.074$
Mince:
NexaPow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.073$
Mince:
NexaPow
Mem. vendor: Micron MT51J256M32
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.073$
Mince:
NexaPow
Mem. vendor: Samsung K4G80325FB
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.073$
Mince:
NexaPow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.073$
Mince:
NexaPow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.073$
Mince:
NexaPow
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.073$
Mince:
NexaPow
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.073$
Mince:
NexaPow
Mem. vendor: Samsung K4G80325FC
Hashrate: 14.6 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.073$
Mince:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 27.38 MH/s 88.13 MH/s
Wt (socket) 132
Core: 1120
Mem.: 1925
Core voltage: 841
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.071$
Mince:
Etchash
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 26.67 MH/s 88.13 MH/s
Wt (socket) 102
Core: 1093
Mem.: 1950
Core voltage: 820
Mem. voltage:
VDDCI voltage: 750
Čistý zisk
0.069$
Mince:
Blake 3
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 0.482 GH/s
Wt (socket) 128
Core: 1265
Mem.: 300
Core voltage: 918
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.067$
Mince:
Blake 3
Mem. vendor: Samsung K4G80325FC
Hashrate: 0.474 GH/s
Wt (socket) 113
Core: 1265
Mem.: 300
Core voltage: 893
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.066$
Mince:
Blake 3
Mem. vendor: Micron MT51J256M32
Hashrate: 0.472 GH/s
Wt (socket) 116
Core: 1244
Mem.: 300
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.066$
Mince:
Blake 3
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 0.464 GH/s
Wt (socket) 126
Core: 1219
Mem.: 300
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.064$
Mince:
Blake 3
Mem. vendor: Micron MT51J256M3
Hashrate: 0.457 GH/s
Wt (socket) 119
Core: 1212
Mem.: 300
Core voltage: 831
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.063$
Mince:
Blake 3
Mem. vendor: Samsung K4G80325FB
Hashrate: 0.453 GH/s
Wt (socket) 99
Core: 1197
Mem.: 300
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.063$
Mince:
Blake 3
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 0.435 GH/s
Wt (socket) 80
Core: 1134
Mem.: 300
Core voltage: 812
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.06$
Mince:
Blake 3
Mem. vendor: Samsung K4G41325FE
Hashrate: 0.424 GH/s
Wt (socket) 76
Core: 1107
Mem.: 300
Core voltage: 793
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.059$
Mince:
Karlsen
Mem. vendor:
Hashrate: 210 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.056$
Mince:
Pyrin
Mem. vendor:
Hashrate: 600 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Čistý zisk
0.046$
Mince:
Heavyhash
Mem. vendor: SK Hynix H5GC8H24AJR
Hashrate: 148.94 MH/s
Wt (socket) 132
Core: 1265
Mem.: 300
Core voltage: 923
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Heavyhash
Mem. vendor: Samsung K4G80325FC
Hashrate: 146.56 MH/s
Wt (socket) 116
Core: 1265
Mem.: 300
Core voltage: 894
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Heavyhash
Mem. vendor: Micron MT51J256M32
Hashrate: 145.83 MH/s
Wt (socket) 119
Core: 1244
Mem.: 300
Core voltage: 855
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 143.59 MH/s
Wt (socket) 130
Core: 1219
Mem.: 300
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 141.21 MH/s
Wt (socket) 123
Core: 1212
Mem.: 300
Core voltage: 829
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 140.11 MH/s
Wt (socket) 102
Core: 1197
Mem.: 300
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Heavyhash
Mem. vendor: SK Hynix H5GQ8H24MJR
Hashrate: 134.58 MH/s
Wt (socket) 82
Core: 1134
Mem.: 300
Core voltage: 811
Mem. voltage:
VDDCI voltage: 800
Čistý zisk
0.001$
Mince:
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 131.1 MH/s
Wt (socket) 64
Core: 1107
Mem.: 300
Core voltage: 791
Mem. voltage:
VDDCI voltage: 750
Čistý zisk
0.001$
Výrobce
AMD
Datum vydání
2017
Procesor
Polaris 20
Vyvolávací cena
0.00$
Aktuální cena
336.00$
TDP
150W
Typ paměti
GDDR5
Paměť
8GB
Šířka autobusu
256
8 GB grafická kartaAMD RX570. Specifikace, cena, hashrate
Datum vydání a cena
AMD RX570 byla vydána v roce 2017. Spouštěcí cena - 0.00 $. Aktuální přibližná cena - 336.00 $. Před rozhodnutím, zda si koupit kartu AMD RX570, věnujte pozornost změně ceny oproti roku vydání grafické karty.
RX570 v těžbě
Nejlepší mince, kterou můžete těžit s RX570 - Raven, vám dává 14.76 MH/s hashrate. Při současné denní obtížnosti vyděláte 0.292 $, takže ROI RX570 je 1151 dní.
Spotřeba RX570
RX570 TDP má 150 wattů, zatímco při těžbě spotřebuje v průměru 200 wattů.
