AMD RX470 4 GB
Munt
Mem.
vendor
vendor
Hashrate
Wt (socket)
Core
Mem.
Core
voltage
voltage
Mem.
voltage
voltage
VDDCI
voltage
voltage
Netto winst
Munt:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 15.3 MH/s
Wt (socket) 167
Core: 1166
Mem.: 2050
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.269$
Munt:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.79 MH/s
Wt (socket) 167
Core: 1060
Mem.: 1875
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.26$
Munt:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.32 MH/s
Wt (socket) 156
Core: 1090
Mem.: 1925
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.252$
Munt:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.32 MH/s
Wt (socket) 151
Core: 1084
Mem.: 1925
Core voltage: 832
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.252$
Munt:
Kawpow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.69 MH/s
Wt (socket) 158
Core: 1060
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.241$
Munt:
Kawpow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.47 MH/s
Wt (socket) 131
Core: 1016
Mem.: 1800
Core voltage: 745
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.237$
Munt:
Verthash
Mem. vendor:
Hashrate: 535 kH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.197$
Munt:
Kawpow
Mem. vendor:
Hashrate: 10 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.122$
Munt:
Autolykos
Mem. vendor: Samsung K4G80325FB
Hashrate: 61.49 MH/s
Wt (socket) 98
Core: 1166
Mem.: 1875
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.118$
Munt:
Autolykos
Mem. vendor: Samsung K4G41325FE
Hashrate: 59.43 MH/s
Wt (socket) 98
Core: 1060
Mem.: 1725
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.114$
Munt:
Autolykos
Mem. vendor: Micron MT51J256M3
Hashrate: 57.55 MH/s
Wt (socket) 91
Core: 1090
Mem.: 1763
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.11$
Munt:
Autolykos
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 57.55 MH/s
Wt (socket) 88
Core: 1084
Mem.: 1763
Core voltage: 825
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.11$
Munt:
Autolykos
Mem. vendor: Elpida EDW4032BABG
Hashrate: 55.02 MH/s
Wt (socket) 92
Core: 1060
Mem.: 1725
Core voltage: 830
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.105$
Munt:
Autolykos
Mem. vendor: Samsung K4G20325FS
Hashrate: 54.12 MH/s
Wt (socket) 77
Core: 1016
Mem.: 1650
Core voltage: 739
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.104$
Munt:
Ethash
Mem. vendor: Samsung K4G80325FB
Hashrate: 31.39 MH/s
Wt (socket) 126
Core: 1166
Mem.: 2075
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.095$
Munt:
Ethash
Mem. vendor: Samsung K4G41325FE
Hashrate: 30.34 MH/s
Wt (socket) 126
Core: 1060
Mem.: 1900
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.092$
Munt:
Ethash
Mem. vendor: Micron MT51J256M3
Hashrate: 29.38 MH/s
Wt (socket) 118
Core: 1090
Mem.: 1950
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.089$
Munt:
Ethash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.38 MH/s
Wt (socket) 114
Core: 1084
Mem.: 1950
Core voltage: 838
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.089$
Munt:
Ethash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 28.09 MH/s
Wt (socket) 119
Core: 1060
Mem.: 1900
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.085$
Munt:
Ethash
Mem. vendor: Samsung K4G20325FS
Hashrate: 27.63 MH/s
Wt (socket) 99
Core: 1016
Mem.: 1825
Core voltage: 750
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.084$
Munt:
Blake 3
Mem. vendor: Samsung K4G80325FB
Hashrate: 0.527 GH/s
Wt (socket) 107
Core: 1229
Mem.: 601
Core voltage: 887
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.081$
Munt:
Etchash
Mem. vendor: Samsung K4G80325FB
Hashrate: 31.39 MH/s
Wt (socket) 126
Core: 1166
Mem.: 2075
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.08$
Munt:
Blake 3
Mem. vendor: Samsung K4G41325FE
Hashrate: 0.51 GH/s
Wt (socket) 107
Core: 1117
Mem.: 601
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.079$
Munt:
Etchash
Mem. vendor: Samsung K4G41325FE
Hashrate: 30.34 MH/s
Wt (socket) 126
Core: 1060
Mem.: 1900
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.078$
Munt:
Blake 3
Mem. vendor: Micron MT51J256M3
Hashrate: 0.494 GH/s
Wt (socket) 100
Core: 1149
Mem.: 601
Core voltage: 893
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.076$
Munt:
Blake 3
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 0.494 GH/s
Wt (socket) 97
Core: 1143
Mem.: 601
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.076$
Munt:
Etchash
Mem. vendor: Micron MT51J256M3
Hashrate: 29.38 MH/s
Wt (socket) 118
Core: 1090
Mem.: 1950
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.075$
Munt:
Etchash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.38 MH/s
Wt (socket) 114
Core: 1084
Mem.: 1950
Core voltage: 838
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.075$
Munt:
Etchash
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 29.2 MH/s 88.13 MH/s
Wt (socket) 176
Core: 1214
Mem.: 2050
Core voltage: 920
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.075$
Munt:
Etchash
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 28.23 MH/s 88.13 MH/s
Wt (socket) 176
Core: 1104
Mem.: 1875
Core voltage: 900
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.073$
Munt:
Blake 3
Mem. vendor: Elpida EDW4032BABG
Hashrate: 0.472 GH/s
Wt (socket) 101
Core: 1117
Mem.: 601
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.073$
Munt:
Etchash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 28.09 MH/s
Wt (socket) 119
Core: 1060
Mem.: 1900
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.072$
Munt:
Blake 3
Mem. vendor: Samsung K4G20325FS
Hashrate: 0.464 GH/s
Wt (socket) 84
Core: 1071
Mem.: 601
Core voltage: 762
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.071$
Munt:
Etchash
Mem. vendor: Samsung K4G20325FS
Hashrate: 27.63 MH/s
Wt (socket) 99
Core: 1016
Mem.: 1825
Core voltage: 750
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.071$
Munt:
Etchash
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 27.33 MH/s 88.13 MH/s
Wt (socket) 165
Core: 1135
Mem.: 1925
Core voltage: 926
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.07$
Munt:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 27.33 MH/s 88.13 MH/s
Wt (socket) 160
Core: 1129
Mem.: 1925
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.07$
Munt:
Etchash
Heavyhash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 26.13 MH/s 88.13 MH/s
Wt (socket) 167
Core: 1104
Mem.: 1875
Core voltage: 886
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.067$
Munt:
Etchash
Heavyhash
Mem. vendor: Samsung K4G20325FS
Hashrate: 25.71 MH/s 88.13 MH/s
Wt (socket) 139
Core: 1058
Mem.: 1800
Core voltage: 789
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.066$
Munt:
NexaPow
Mem. vendor: Micron MT51J256M3
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.065$
Munt:
NexaPow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.065$
Munt:
NexaPow
Mem. vendor: Samsung K4G41325FE
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.065$
Munt:
NexaPow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.065$
Munt:
NexaPow
Mem. vendor: Samsung K4G80325FB
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.065$
Munt:
NexaPow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.065$
Munt:
Karlsen
Mem. vendor:
Hashrate: 210 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.058$
Munt:
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 148.60582278481013 MH/s
Wt (socket) 110
Core: 1229
Mem.: 601
Core voltage: 887
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 143.63493670886075 MH/s
Wt (socket) 110
Core: 1117
Mem.: 601
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 139.09012658227846 MH/s
Wt (socket) 103
Core: 1149
Mem.: 601
Core voltage: 893
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 139.09012658227846 MH/s
Wt (socket) 100
Core: 1143
Mem.: 601
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Heavyhash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 132.98303797468353 MH/s
Wt (socket) 104
Core: 1117
Mem.: 601
Core voltage: 855
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Heavyhash
Mem. vendor: Samsung K4G20325FS
Hashrate: 130.80531645569621 MH/s
Wt (socket) 87
Core: 1071
Mem.: 601
Core voltage: 761
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Fabrikant
AMD
Datum van publicatie
2016
Verwerker
Ellesmere
Introductieprijs
179.00$
Huidige prijs
210.00$
TDP
120W
Geheugentype
GDDR5
Geheugen
4GB
Bus breedte
256
AMD RX470 4 GB videokaart hashrate
Releasedatum en prijs
AMD RX470 videokaart is uitgebracht in 2016. Introductieprijs - 179.00 $. Huidige geschatte prijs - 210.00 $. Let op de prijsverandering in vergelijking met het jaar van uitgave van de videokaart, voordat u besluit of u een AMD RX470-kaart wilt kopen.
RX470 in de mining
Beste munt om te minen met RX470 videokaart - Clore, het geeft 15.3 MH/s hashrate. Met de huidige dagelijkse moeilijkheidsgraad verdien je 0.269 $, dus de ROI van RX470 is 782 dagen.
RX470 consumptie
RX470 TDP is 120 watt, terwijl het in de mijnbouw gemiddeld 167 watt verbruikt.
