AMD RX470 8 GB
Munt
Mem.
vendor
vendor
Hashrate
Wt (socket)
Core
Mem.
Core
voltage
voltage
Mem.
voltage
voltage
VDDCI
voltage
voltage
Netto winst
Munt:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 15.3 MH/s
Wt (socket) 167
Core: 1166
Mem.: 2050
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.178$
Munt:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.79 MH/s
Wt (socket) 167
Core: 1060
Mem.: 1875
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.172$
Munt:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.32 MH/s
Wt (socket) 156
Core: 1090
Mem.: 1925
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.166$
Munt:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.32 MH/s
Wt (socket) 151
Core: 1084
Mem.: 1925
Core voltage: 832
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.166$
Munt:
Kawpow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.69 MH/s
Wt (socket) 158
Core: 1060
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.159$
Munt:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 15.3 MH/s
Wt (socket) 167
Core: 1166
Mem.: 2050
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.158$
Munt:
Kawpow
Mem. vendor: Samsung K4G80325FB
Hashrate: 15.3 MH/s
Wt (socket) 167
Core: 1166
Mem.: 2050
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.157$
Munt:
Kawpow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.47 MH/s
Wt (socket) 131
Core: 1016
Mem.: 1800
Core voltage: 745
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.156$
Munt:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.79 MH/s
Wt (socket) 167
Core: 1060
Mem.: 1875
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.153$
Munt:
Kawpow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.79 MH/s
Wt (socket) 167
Core: 1060
Mem.: 1875
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.152$
Munt:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.32 MH/s
Wt (socket) 156
Core: 1090
Mem.: 1925
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.148$
Munt:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.32 MH/s
Wt (socket) 151
Core: 1084
Mem.: 1925
Core voltage: 832
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.148$
Munt:
Kawpow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.32 MH/s
Wt (socket) 156
Core: 1090
Mem.: 1925
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.147$
Munt:
Kawpow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.32 MH/s
Wt (socket) 151
Core: 1084
Mem.: 1925
Core voltage: 832
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.147$
Munt:
ProgPowZ
Mem. vendor:
Hashrate: 10 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.145$
Munt:
Kawpow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.69 MH/s
Wt (socket) 158
Core: 1060
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.141$
Munt:
Kawpow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.69 MH/s
Wt (socket) 158
Core: 1060
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.14$
Munt:
Kawpow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.47 MH/s
Wt (socket) 131
Core: 1016
Mem.: 1800
Core voltage: 745
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.139$
Munt:
Kawpow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.47 MH/s
Wt (socket) 131
Core: 1016
Mem.: 1800
Core voltage: 745
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.138$
Munt:
FiroPow
Mem. vendor: Samsung K4G80325FB
Hashrate: 15.3 MH/s
Wt (socket) 163
Core: 1166
Mem.: 2050
Core voltage: 869
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.128$
Munt:
FiroPow
Mem. vendor: Samsung K4G41325FE
Hashrate: 14.79 MH/s
Wt (socket) 163
Core: 1060
Mem.: 1875
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.124$
Munt:
Autolykos
Mem. vendor: Samsung K4G80325FB
Hashrate: 61.49 MH/s
Wt (socket) 98
Core: 1166
Mem.: 1875
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.122$
Munt:
FiroPow
Mem. vendor: Micron MT51J256M3
Hashrate: 14.32 MH/s
Wt (socket) 152
Core: 1090
Mem.: 1925
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.12$
Munt:
FiroPow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 14.32 MH/s
Wt (socket) 147
Core: 1084
Mem.: 1925
Core voltage: 832
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.12$
Munt:
Autolykos
Mem. vendor: Samsung K4G41325FE
Hashrate: 59.43 MH/s
Wt (socket) 98
Core: 1060
Mem.: 1725
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.118$
Munt:
Kawpow
Mem. vendor:
Hashrate: 10 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.115$
Munt:
FiroPow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.69 MH/s
Wt (socket) 154
Core: 1060
Mem.: 1875
Core voltage: 837
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.114$
Munt:
Autolykos
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 57.55 MH/s
Wt (socket) 88
Core: 1084
Mem.: 1763
Core voltage: 825
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.114$
Munt:
Autolykos
Mem. vendor: Micron MT51J256M3
Hashrate: 57.55 MH/s
Wt (socket) 91
Core: 1090
Mem.: 1763
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.114$
Munt:
FiroPow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.47 MH/s
Wt (socket) 127
Core: 1016
Mem.: 1800
Core voltage: 745
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.113$
Munt:
Autolykos
Mem. vendor: Elpida EDW4032BABG
Hashrate: 55.02 MH/s
Wt (socket) 92
Core: 1060
Mem.: 1725
Core voltage: 830
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.109$
Munt:
Autolykos
Mem. vendor: Samsung K4G80325FB
Hashrate: 61.49 MH/s
Wt (socket) 98
Core: 1166
Mem.: 1875
Core voltage: 862
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.109$
Munt:
Autolykos
Mem. vendor: Samsung K4G20325FS
Hashrate: 54.12 MH/s
Wt (socket) 77
Core: 1016
Mem.: 1650
Core voltage: 739
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.107$
Munt:
Autolykos
Mem. vendor: Samsung K4G41325FE
Hashrate: 59.43 MH/s
Wt (socket) 98
Core: 1060
Mem.: 1725
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.105$
Munt:
Autolykos
Mem. vendor: Micron MT51J256M3
Hashrate: 57.55 MH/s
Wt (socket) 91
Core: 1090
Mem.: 1763
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.102$
Munt:
Autolykos
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 57.55 MH/s
Wt (socket) 88
Core: 1084
Mem.: 1763
Core voltage: 825
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.102$
Munt:
Verthash
Mem. vendor:
Hashrate: 535 kH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.099$
Munt:
Autolykos
Mem. vendor: Elpida EDW4032BABG
Hashrate: 55.02 MH/s
Wt (socket) 92
Core: 1060
Mem.: 1725
Core voltage: 830
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.097$
Munt:
Autolykos
Mem. vendor: Samsung K4G20325FS
Hashrate: 54.12 MH/s
Wt (socket) 77
Core: 1016
Mem.: 1650
Core voltage: 739
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.096$
Munt:
Cuckoo (AE)
Mem. vendor:
Hashrate: 1.8 Gp/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.064$
Munt:
Ethash
Mem. vendor: Samsung K4G80325FB
Hashrate: 31.39 MH/s
Wt (socket) 126
Core: 1166
Mem.: 2075
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.055$
Munt:
Ethash
Mem. vendor: Samsung K4G41325FE
Hashrate: 30.34 MH/s
Wt (socket) 126
Core: 1060
Mem.: 1900
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.053$
Munt:
Etchash
Mem. vendor: Samsung K4G80325FB
Hashrate: 31.39 MH/s
Wt (socket) 126
Core: 1166
Mem.: 2075
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.053$
Munt:
Ethash
Mem. vendor: Samsung K4G80325FB
Hashrate: 31.39 MH/s
Wt (socket) 126
Core: 1166
Mem.: 2075
Core voltage: 875
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.052$
Munt:
Ethash
Mem. vendor: Micron MT51J256M3
Hashrate: 29.38 MH/s
Wt (socket) 118
Core: 1090
Mem.: 1950
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.051$
Munt:
Ethash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.38 MH/s
Wt (socket) 114
Core: 1084
Mem.: 1950
Core voltage: 838
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.051$
Munt:
Etchash
Mem. vendor: Samsung K4G41325FE
Hashrate: 30.34 MH/s
Wt (socket) 126
Core: 1060
Mem.: 1900
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.051$
Munt:
Ethash
Mem. vendor: Samsung K4G41325FE
Hashrate: 30.34 MH/s
Wt (socket) 126
Core: 1060
Mem.: 1900
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.05$
Munt:
Etchash
Mem. vendor: Micron MT51J256M3
Hashrate: 29.38 MH/s
Wt (socket) 118
Core: 1090
Mem.: 1950
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.049$
Munt:
Etchash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.38 MH/s
Wt (socket) 114
Core: 1084
Mem.: 1950
Core voltage: 838
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.049$
Munt:
Etchash
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 29.2 MH/s 88.13 MH/s
Wt (socket) 176
Core: 1214
Mem.: 2050
Core voltage: 920
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.049$
Munt:
Ethash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 28.09 MH/s
Wt (socket) 119
Core: 1060
Mem.: 1900
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.049$
Munt:
Ethash
Mem. vendor: Micron MT51J256M3
Hashrate: 29.38 MH/s
Wt (socket) 118
Core: 1090
Mem.: 1950
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.048$
Munt:
Ethash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 29.38 MH/s
Wt (socket) 114
Core: 1084
Mem.: 1950
Core voltage: 838
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.048$
Munt:
Ethash
Mem. vendor: Samsung K4G20325FS
Hashrate: 27.63 MH/s
Wt (socket) 99
Core: 1016
Mem.: 1825
Core voltage: 750
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.048$
Munt:
Ethash
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 29.2 MH/s 88.13 MH/s
Wt (socket) 176
Core: 1214
Mem.: 2050
Core voltage: 920
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.048$
Munt:
Etchash
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 28.23 MH/s 88.13 MH/s
Wt (socket) 176
Core: 1104
Mem.: 1875
Core voltage: 900
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.048$
Munt:
Etchash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 28.09 MH/s
Wt (socket) 119
Core: 1060
Mem.: 1900
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.047$
Munt:
Ethash
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 28.23 MH/s 88.13 MH/s
Wt (socket) 176
Core: 1104
Mem.: 1875
Core voltage: 900
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.047$
Munt:
Etchash
Mem. vendor: Samsung K4G20325FS
Hashrate: 27.63 MH/s
Wt (socket) 99
Core: 1016
Mem.: 1825
Core voltage: 750
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.046$
Munt:
Ethash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 28.09 MH/s
Wt (socket) 119
Core: 1060
Mem.: 1900
Core voltage: 843
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.046$
Munt:
Etchash
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 27.33 MH/s 88.13 MH/s
Wt (socket) 165
Core: 1135
Mem.: 1925
Core voltage: 926
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.046$
Munt:
Etchash
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 27.33 MH/s 88.13 MH/s
Wt (socket) 160
Core: 1129
Mem.: 1925
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.046$
Munt:
Ethash
Mem. vendor: Samsung K4G20325FS
Hashrate: 27.63 MH/s
Wt (socket) 99
Core: 1016
Mem.: 1825
Core voltage: 750
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.045$
Munt:
Ethash
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 27.33 MH/s 88.13 MH/s
Wt (socket) 165
Core: 1135
Mem.: 1925
Core voltage: 926
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.045$
Munt:
Ethash
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 27.33 MH/s 88.13 MH/s
Wt (socket) 160
Core: 1129
Mem.: 1925
Core voltage: 881
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.045$
Munt:
Etchash
Heavyhash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 26.13 MH/s 88.13 MH/s
Wt (socket) 167
Core: 1104
Mem.: 1875
Core voltage: 886
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.044$
Munt:
Etchash
Heavyhash
Mem. vendor: Samsung K4G20325FS
Hashrate: 25.71 MH/s 88.13 MH/s
Wt (socket) 139
Core: 1058
Mem.: 1800
Core voltage: 789
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.043$
Munt:
Ethash
Heavyhash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 26.13 MH/s 88.13 MH/s
Wt (socket) 167
Core: 1104
Mem.: 1875
Core voltage: 886
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.043$
Munt:
Ethash
Heavyhash
Mem. vendor: Samsung K4G20325FS
Hashrate: 25.71 MH/s 88.13 MH/s
Wt (socket) 139
Core: 1058
Mem.: 1800
Core voltage: 789
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.042$
Munt:
NexaPow
Mem. vendor: Micron MT51J256M3
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.033$
Munt:
NexaPow
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.033$
Munt:
NexaPow
Mem. vendor: Samsung K4G41325FE
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.033$
Munt:
NexaPow
Mem. vendor: Elpida EDW4032BABG
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.033$
Munt:
NexaPow
Mem. vendor: Samsung K4G80325FB
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.033$
Munt:
NexaPow
Mem. vendor: Samsung K4G20325FS
Hashrate: 13.4 MH/s
Wt (socket)
Core:
Mem.:
Core voltage:
Mem. voltage:
VDDCI voltage:
Netto winst
0.033$
Munt:
Blake 3
Mem. vendor: Samsung K4G80325FB
Hashrate: 0.527 GH/s
Wt (socket) 107
Core: 1229
Mem.: 601
Core voltage: 887
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Blake 3
Mem. vendor: Samsung K4G41325FE
Hashrate: 0.51 GH/s
Wt (socket) 107
Core: 1117
Mem.: 601
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Blake 3
Mem. vendor: Micron MT51J256M3
Hashrate: 0.494 GH/s
Wt (socket) 100
Core: 1149
Mem.: 601
Core voltage: 893
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Blake 3
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 0.494 GH/s
Wt (socket) 97
Core: 1143
Mem.: 601
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Blake 3
Mem. vendor: Elpida EDW4032BABG
Hashrate: 0.472 GH/s
Wt (socket) 101
Core: 1117
Mem.: 601
Core voltage: 856
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Blake 3
Mem. vendor: Samsung K4G20325FS
Hashrate: 0.464 GH/s
Wt (socket) 84
Core: 1071
Mem.: 601
Core voltage: 762
Mem. voltage:
VDDCI voltage: 800
Netto winst
0.001$
Munt:
Heavyhash
Mem. vendor: Samsung K4G80325FB
Hashrate: 148.60582278481013 MH/s
Wt (socket) 110
Core: 1229
Mem.: 601
Core voltage: 887
Mem. voltage:
VDDCI voltage: 800
Netto winst
0$
Munt:
Heavyhash
Mem. vendor: Samsung K4G41325FE
Hashrate: 143.63493670886075 MH/s
Wt (socket) 110
Core: 1117
Mem.: 601
Core voltage: 868
Mem. voltage:
VDDCI voltage: 800
Netto winst
0$
Munt:
Heavyhash
Mem. vendor: Micron MT51J256M3
Hashrate: 139.09012658227846 MH/s
Wt (socket) 103
Core: 1149
Mem.: 601
Core voltage: 893
Mem. voltage:
VDDCI voltage: 800
Netto winst
0$
Munt:
Heavyhash
Mem. vendor: SK Hynix H5GC4H24AJR
Hashrate: 139.09012658227846 MH/s
Wt (socket) 100
Core: 1143
Mem.: 601
Core voltage: 850
Mem. voltage:
VDDCI voltage: 800
Netto winst
0$
Munt:
Heavyhash
Mem. vendor: Elpida EDW4032BABG
Hashrate: 132.98303797468353 MH/s
Wt (socket) 104
Core: 1117
Mem.: 601
Core voltage: 855
Mem. voltage:
VDDCI voltage: 800
Netto winst
0$
Munt:
Heavyhash
Mem. vendor: Samsung K4G20325FS
Hashrate: 130.80531645569621 MH/s
Wt (socket) 87
Core: 1071
Mem.: 601
Core voltage: 761
Mem. voltage:
VDDCI voltage: 800
Netto winst
0$
Fabrikant
AMD
Datum van publicatie
2016
Verwerker
Ellesmere
Introductieprijs
0.00$
Huidige prijs
320.00$
TDP
120W
Geheugentype
GDDR5
Geheugen
8GB
Bus breedte
256
AMD RX470 8 GB videokaart hashrate
Releasedatum en prijs
AMD RX470 videokaart is uitgebracht in 2016. Introductieprijs - 0.00 $. Huidige geschatte prijs - 320.00 $. Let op de prijsverandering in vergelijking met het jaar van uitgave van de videokaart, voordat u besluit of u een AMD RX470-kaart wilt kopen.
RX470 in de mining
Beste munt om te minen met RX470 videokaart - Raven, het geeft 15.3 MH/s hashrate. Met de huidige dagelijkse moeilijkheidsgraad verdien je 0.178 $, dus de ROI van RX470 is 1801 dagen.
RX470 consumptie
RX470 TDP is 120 watt, terwijl het in de mijnbouw gemiddeld 167 watt verbruikt.
